n type中文是什么意思

• 人n血型

• "n"中文翻译    N ＝nuclear 核的：N-waste 核废料。
• "type"中文翻译    n. 1.型，类型，(工业产品的)品种；风格，型式。 2 ...
• "n-type" 中文翻译 :    或负型; 及负型
• "coaxial n type adapter n" 中文翻译 :    型同轴线接头转接器
• "n type conduction" 中文翻译 :    n 型导电; 型导电
• "n type conductivity" 中文翻译 :    n 型电导率; n型电导率; 型电导率
• "n type diffusion" 中文翻译 :    施钟质扩散
• "n type dopant" 中文翻译 :    施钟质
• "n type dopant atom" 中文翻译 :    n 型掺杂剂原子; 型掺杂剂原子
• "n type doping" 中文翻译 :    n 型掺杂; 型掺杂
• "n type of human blood" 中文翻译 :    人n血型
• "n type semiconductor" 中文翻译 :    n 型半导体; 型半导体
• "n type substrate" 中文翻译 :    型衬底
• "n-type conduction" 中文翻译 :    n型晶体整流器
• "n-type conductivity" 中文翻译 :    n型传导系数; n型关导体电导率
• "n-type crystal rectifier" 中文翻译 :    n型晶体整流器
• "n-type germanium" 中文翻译 :    n型锗
• "n-type material" 中文翻译 :    型材料
• "n-type rubber" 中文翻译 :    丁腈橡胶
• "n-type semiconductor" 中文翻译 :    n型半导体; 型半导体
• "n-type semiconductorn" 中文翻译 :    型半导体
• "n-type wafer" 中文翻译 :    型硅片
• "n-type wafern" 中文翻译 :    型晶体
• "steel type n" 中文翻译 :    n型再渗氮高强度钢
• "type n antifreeze" 中文翻译 :    型防冻剂

• Application of gpy - n type subbottom profiler in waterway engineering
  型浅地层剖面仪在航道工程中的应用
• Coaxial n type adapter
  型同轴线接头转接器
• X , y type is divided into n type left convolution and s type right convolution in line with direction of volution
  X ， y型根据螺旋方向的不同分为n型，左回旋s右回旋。
• This policy is a one - of - n type policy which provides automated peer recovery processing support such that only one server owns the recovery log at any time
  该策略是one - of - n类型策略，提供自动对等恢复处理支持确保任何时候都只有一台服务器持有恢复日志。
• 2 for the first time , rf sputtering method and vapor doping method have been combined to prepare n type bn films . bn films doped with s are n type conductivity
  掺s后的氮化硼薄膜表现出n型导电，未掺杂的氮化硼薄膜的电阻率1 . 8 1011 cm ，掺杂后的氮化硼薄膜的电阻率为7 . 3 107 cm 。
• Bn films doped with s are n type conductivity . undoped bn films exhibit a resistivity of 1 . 8 1011 cm and those of doped are 2 . 13 105 cm ， decreased by six order of magnitude . s fountain temperature and substrate temperature impact the resistivity evidently
  S源加热温度对氮化硼薄膜的电阻率有直接影响，表现在随着s源加热温度的升高，氮化硼薄膜的电阻率下降的趋势加快。
• As an air breaker with the minimal size in the world , the masterpact mt n type of breaker can meet requirements of various operating condition . it produces no flashover . it is free of maintenance and is fully intelligent . the breaking capability of masterpact mt n breaker upgraded is increased from 42ka to 50ka
  作为世界上体积最小的空气断路器， masterpactmtn型断路器能满足各种使用环境的要求、具有零飞弧、免维修、完全智能化等特点，而升级之后的masterpactmtn断路器的分断能力更是由42ka提升到50ka 。
• The n type carrier was provided by interstitial zn atom , and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility . when zno thin film was annealed in the ar ambience , p conduction type was founded in the zno thin film which grew in oxygen enrichment condition . this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ) , and p type carrier was from oi
  在ar气保护下,对富氧条件下生长的zno薄膜的退火后的霍尔测量中发现, zno薄膜呈现p型导电状态,分析认为,这可能是由于富氧状态下生长的zno薄膜中过量的o在ar气保护下退火没有逸出薄膜,反而进入了zno薄膜的间隙位置,成为正电中心,使zno薄膜呈现p型导电。
• Based on the hydrodynamics energy transport model , the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density . the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet , and for both devices of different structure , the impact of n type accepted interface state on device performance is far larger than that of p type . it also manifests that the degradation is different for the device with different channel doping density . the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
  基于流体动力学能量输运模型，对沟道杂质浓度不同的深亚微米槽栅和平面pmosfet中施主型界面态引起的器件特性的退化进行了研究.研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件，且电子施主界面态密度对器件特性的影响远大于空穴界面态.特别是沟道杂质浓度不同，界面态引起的器件特性的退化不同.沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大